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2N2905 PNP Bipolar Junction Transistor – TO-39 Metal Package

2N2905 PNP Bipolar Junction Transistor – TO-39 Metal Package

QAR 5.00/ unit

Arrives by 17 October · Standard · Delivery from QAR 50

Express: 15 October · Economy: 21 October

1

Description

The 2N2905 is a general-purpose PNP bipolar junction transistor designed for switching and amplification in low- to medium-power applications. Housed in a durable TO-39 metal can package , it offers improved thermal dissipation and mechanical robustness compared to plastic package transistors. With a collector-emitter voltage rating of 60V and collector current up to 600mA , the 2N2905 is suitable for signal amplification, driver stages, industrial control circuits, and complementary transistor designs. Its stable electrical performance and high-temperature tolerance make it a reliable choice for demanding analog and switching applications. Features • General-purpose PNP bipolar transistor • Collector-emitter voltage up to 60V • Collector current up to 600mA • Durable TO-39 metal package • Improved thermal performance • Suitable for switching and amplification • Stable DC current gain • Low saturation voltage for efficient switching • Reliable operation at high temperatures • Moderate-speed signal handling • Good mechanical durability • Suitable for industrial applications • Through-hole mounting for secure installation • Ideal for analog and driver circuits Tutorials • NPN & PNP Transistors explained - electronics engineering

Specifications

Model2N2905
Device TypePNP Bipolar Junction Transistor (BJT)
PolarityPNP
Collector-Emitter Voltage (Vce)60V
Collector-Base Voltage (Vcb)60V
Emitter-Base Voltage (Veb)5V
Maximum Collector Current (Ic)0.6A
Power DissipationApproximately 1.8W
DC Current Gain (hFE)20 – 60
Transition Frequency (fT)Approximately 20MHz
Package TypeTO-39 Metal Can
Mounting TypeThrough-Hole
Operating Temperature Range-65°C to +200°C
Application TypeAmplification and Switching
Category
Chips and ICs