
2N2905 PNP Bipolar Junction Transistor – TO-39 Metal Package
QAR 5.00/ unit
Arrives by 17 October · Standard · Delivery from QAR 50
Express: 15 October · Economy: 21 October
Description
The 2N2905 is a general-purpose PNP bipolar junction transistor designed for switching and amplification in low- to medium-power applications. Housed in a durable TO-39 metal can package , it offers improved thermal dissipation and mechanical robustness compared to plastic package transistors. With a collector-emitter voltage rating of 60V and collector current up to 600mA , the 2N2905 is suitable for signal amplification, driver stages, industrial control circuits, and complementary transistor designs. Its stable electrical performance and high-temperature tolerance make it a reliable choice for demanding analog and switching applications. Features • General-purpose PNP bipolar transistor • Collector-emitter voltage up to 60V • Collector current up to 600mA • Durable TO-39 metal package • Improved thermal performance • Suitable for switching and amplification • Stable DC current gain • Low saturation voltage for efficient switching • Reliable operation at high temperatures • Moderate-speed signal handling • Good mechanical durability • Suitable for industrial applications • Through-hole mounting for secure installation • Ideal for analog and driver circuits Tutorials • NPN & PNP Transistors explained - electronics engineering
Specifications
| Model | 2N2905 |
|---|---|
| Device Type | PNP Bipolar Junction Transistor (BJT) |
| Polarity | PNP |
| Collector-Emitter Voltage (Vce) | 60V |
| Collector-Base Voltage (Vcb) | 60V |
| Emitter-Base Voltage (Veb) | 5V |
| Maximum Collector Current (Ic) | 0.6A |
| Power Dissipation | Approximately 1.8W |
| DC Current Gain (hFE) | 20 – 60 |
| Transition Frequency (fT) | Approximately 20MHz |
| Package Type | TO-39 Metal Can |
| Mounting Type | Through-Hole |
| Operating Temperature Range | -65°C to +200°C |
| Application Type | Amplification and Switching |
- Category
- Chips and ICs