
MJE13003 NPN Bipolar Junction Transistor – 2A 400V TO-220
QAR 2.00/ unit
Arrives by 17 October · Standard · Delivery from QAR 50
Express: 15 October · Economy: 21 October
Description
The MJE13003 is a high-voltage NPN bipolar junction transistor designed for medium-current switching and power control applications. It supports a collector-emitter voltage of up to 400V and continuous collector current up to 2A , making it ideal for off-line switching power supplies, inverters, ballast circuits, and high-voltage driver stages. With fast switching performance, low saturation voltage, and strong thermal handling in a TO-220 package, the MJE13003 is widely used in SMPS designs and power electronics. Features • High-voltage NPN bipolar transistor • Collector-emitter voltage up to 400V • Continuous collector current up to 2A • Optimized for switching power applications • Fast switching performance • Low saturation voltage for improved efficiency • High power dissipation capability • Suitable for off-line power supplies • Reliable repetitive switching operation • TO-220 package for better heat dissipation • Stable DC gain characteristics • Suitable for inverter and ballast circuits • High-voltage driver capability • Easy mounting with heatsink support Tutorials • 13003 Transistor Stereo Amplifier | Powerful Stereo Amplifier.
Specifications
| Model | MJE13003 |
|---|---|
| Device Type | NPN Bipolar Junction Transistor (BJT) |
| Polarity | NPN |
| Collector-Emitter Voltage (Vce) | 400V |
| Collector-Base Voltage (Vcb) | 700V |
| Emitter-Base Voltage (Veb) | 9V |
| Maximum Collector Current (Ic) | 2A |
| Power Dissipation | Approximately 75W |
| DC Current Gain (hFE) | 8 – 40 |
| Transition Frequency (fT) | Approximately 4MHz |
| Package Type | TO-220 |
| Mounting Type | Through-Hole |
| Operating Temperature Range | -55°C to +150°C |
| Application Type | High-Voltage Switching |
- Category
- Chips and ICs