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MJE13003 NPN Bipolar Junction Transistor – 2A 400V TO-220

MJE13003 NPN Bipolar Junction Transistor – 2A 400V TO-220

QAR 2.00/ unit

Arrives by 17 October · Standard · Delivery from QAR 50

Express: 15 October · Economy: 21 October

1

Description

The MJE13003 is a high-voltage NPN bipolar junction transistor designed for medium-current switching and power control applications. It supports a collector-emitter voltage of up to 400V and continuous collector current up to 2A , making it ideal for off-line switching power supplies, inverters, ballast circuits, and high-voltage driver stages. With fast switching performance, low saturation voltage, and strong thermal handling in a TO-220 package, the MJE13003 is widely used in SMPS designs and power electronics. Features • High-voltage NPN bipolar transistor • Collector-emitter voltage up to 400V • Continuous collector current up to 2A • Optimized for switching power applications • Fast switching performance • Low saturation voltage for improved efficiency • High power dissipation capability • Suitable for off-line power supplies • Reliable repetitive switching operation • TO-220 package for better heat dissipation • Stable DC gain characteristics • Suitable for inverter and ballast circuits • High-voltage driver capability • Easy mounting with heatsink support Tutorials • 13003 Transistor Stereo Amplifier | Powerful Stereo Amplifier.

Specifications

ModelMJE13003
Device TypeNPN Bipolar Junction Transistor (BJT)
PolarityNPN
Collector-Emitter Voltage (Vce)400V
Collector-Base Voltage (Vcb)700V
Emitter-Base Voltage (Veb)9V
Maximum Collector Current (Ic)2A
Power DissipationApproximately 75W
DC Current Gain (hFE)8 – 40
Transition Frequency (fT)Approximately 4MHz
Package TypeTO-220
Mounting TypeThrough-Hole
Operating Temperature Range-55°C to +150°C
Application TypeHigh-Voltage Switching
Category
Chips and ICs